On the other hand, most non-volatile memory (NVM) is based on floating-gate memory cell architectures. However, DRAM can achieve greater storage densities. Because of this refresh process, DRAM uses more power. However, the charge in this capacitor will slowly leak away, and must be refreshed periodically. Charging and discharging a capacitor can store a '1' or a '0' in the cell. A second type, DRAM ( dynamic RAM), is based around MOS capacitors. These require very low power to keep the stored value when not being accessed. The SRAM ( static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. The value in the memory cell can be accessed by reading it. Its value is maintained/stored until it is changed by the set/reset process. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). The memory cell is the fundamental building block of computer memory.
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